how P, N type is blown to wafer?
- From: "PZ" <patrick.zou@xxxxxxxxx>
- Date: 11 Jan 2006 09:49:41 -0800
So in a wafer, in the process of dopant addtion and diffustion, I
understand it is ion implantation to blow a a donor to the vacant
space. Does this apply only to P? how about N type? In reality, for a
transistor, do PNP sit above each other? or in the same planor?
If one sits above another, that means, when blowing ion, there has to
be some kind of strength difference?
.
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