Re: Effective model for MOSFET channel resistance, etc.

Jim Thompson wrote:
On 10 Jul 2006 07:19:28 -0700, "ER Yost" <eryost@xxxxxxxxx> wrote:

Hello,

Is there anyone who can guide me on what parameters and/or level of
model would be most effective for simulating power dissipation due to
the channel resistance (and other factors) of the MOS? I've been
searching the web for some time and found information about parameters
and levels but very little in the way of suggestions. Any guidance is
appreciated.

ERY

Real(VDS*ID)

...Jim Thompson


Let me try this again.

Calculating the actual power dissipation isn't what I want to know.
Finding a typical model for a MOSFET is what I'm looking for - like
what LEVEL to use, or what a good value to use for LAMBDA or XJ is -
because all (or at least most) of these parameters modify ID - thus
changing the channel resistance.

I can find a lot of info about, say for example, what the equation
SPICE uses to calculate the threshold voltage and what the default
value for PHI is, but I can't find any suggestions for what a typical
value for CBGO is, etc. etc.

Is this more helpful?

ERY

.