Re: MOS process variation

On Wed, 21 Sep 2005 13:25:09 -0400, Keith Williams <krw@xxxxxxxxxx>
wrote:

>In article <c4q2j1ddr2hguaohvq1v3ee6gn7nc2rs5e@xxxxxxx>,
>thegreatone@xxxxxxxxxxx says...
>> On Tue, 20 Sep 2005 22:33:16 -0400, keith <krw@xxxxxxxxxx> wrote:
>>
>> >On Wed, 21 Sep 2005 00:29:25 +0000, Rich Grise wrote:
>> >
>> >> On Tue, 20 Sep 2005 14:22:50 -0700, Jim Thompson wrote:
>> >>
>> >>> On Tue, 20 Sep 2005 11:03:18 -0400, Keith Williams <krw@xxxxxxxxxx>
>> >>
>> >>>>There are also "fast" and "slow" transistors within a wafer (low Vt vs.
>> >>>>high Vt, Thin vs. thick gate ox., for instance).
>> >>>
>> >>> With shitty processing. Wafers tend to be relatively uniform across a
>> >>> wafer, and quite uniform across a single die. Otherwise analog stuff
>> >>> would never work ;-)
>> >>
>> >> But could transistors with different characteristics be _intentionally_
>> >> put on a die? I think that's what Keith is getting at.
>> >
>> >Sure. It's done _all_ the time in advanced processes. One selects the
>> >parameters needed for each transistor, if need be.
>>
>> I've just not seen "fast" and "slow" as descriptors for such
>> processing. I deal with multiple device TYPES all the time.
>
>We don't really call them "fast" or "slow" either. Rather "High
>Vt"/"Low Vt" or "Thin-Ox"/"Thick-Ox" (or something inbetween).
>Depending on the application, either are used for fast/slow choices.
>...or maybe "fast/not-fast" or "fast/who cares" are better choices of
>descriptors. ;-)

half-fast ?:-)

...Jim Thompson
--
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