Re: Vbe stuff
- From: Jim Thompson <To-Email-Use-The-Envelope-Icon@xxxxxxxxxxxxxxx>
- Date: Sun, 15 Oct 2006 07:59:42 -0700
On Sun, 15 Oct 2006 08:55:59 GMT, Robert Baer
<robertbaer@xxxxxxxxxxxxx> wrote:
Following what Mr Pease had to say about Vbe, ie read, at 27C that it
measures 799mV at 100uA, 640mV at 10uA, and 580mV at 1uA for 60mV per
decade.
But.
Measuring a 1N4006 at 21C i get 474mV at 100uA and 387mV at 10uA for
87mV per decade.
Measuring a MPSA42 in DCT mode at 21C i get 564mV at 100uA and 505mV
at 10uA for 59mV per decade.
Seems to make sense; the larger die area will have a lower current
density than a small die area, given the same current.
Comments?
Density has nothing to do with vbe change per decade _provided_ you're
not into where resistance is affecting the measurement.
...Jim Thompson
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