Re: Vbe stuff



Jim Thompson wrote:

Density has nothing to do with vbe change per decade _provided_ you're
not into where resistance is affecting the measurement.

...Jim Thompson

I suppose it has more to do with a design goal minimizing conduction losses in the high current diode thereby prohibiting the use of very large ratios of majority doping material density as with the transistor. This will cause a departure from the simplified minority carrier density at the transition region boundaries as a function of forward bias because the minority carrier density on both sides of the transition region change significantly with a coupled dependence.

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Relevant Pages

  • Re: Vbe stuff
    ... Jim Thompson wrote: ... not into where resistance is affecting the measurement. ... This will cause a departure from the simplified minority carrier density at the transition region boundaries as a function of forward bias because the minority carrier density on both sides of the transition region change significantly with a coupled dependence. ...
    (sci.electronics.design)
  • Re: Vbe stuff
    ... Jim Thompson wrote: ... This will cause a departure from the simplified minority carrier density at the transition region boundaries as a function of forward bias because the minority carrier density on both sides of the transition region change significantly with a coupled dependence. ... The measurement deviations are not about non-linearity due to Is dependence on injection level or anything like that. ...
    (sci.electronics.design)