Re: Scaling beyond 130nm dead or alive? - n type diamond
From: Biff Bubster (york_town1_at_yahoo.com)
Date: 06/12/04
- Next message: Jack: "Building a nanoblock"
- Previous message: Joann Evans: "Re: Leading nanotech experts put 'grey goo' in perspective"
- Next in thread: Uncle Al: "Re: Scaling beyond 130nm dead or alive? - n type diamond"
- Reply: Uncle Al: "Re: Scaling beyond 130nm dead or alive? - n type diamond"
- Messages sorted by: [ date ] [ thread ]
Date: 12 Jun 2004 15:43:16 GMT
Uncle Al <UncleAl0@hate.spam.net> wrote in message
news:<c8lvs502mhd@enews3.newsguy.com>...
> Robert V Hill wrote:
> >
> > Diamond and other material advancement are the way to go. Reversible logic
> > will solve almost 0% of the heat problems in todays CPUs. Most heat build up
> > in CPU is leakage, not bit creation. Ideally we would want to build A CPU
> > with 0 leakage. Once we can do that and heat is still a problem then we will
> > have to move to Reversible logic.
>
> Nobody can make electrically usable n-doped diamond. Anyone who can
> will have a key patent on the future. I'm a little surprised all the
> folks looking at lithium, nitrogen, and phosphorus dopants have not
> considered magnesium or titanium. One doe well to address the new
> problem, not old solutions to other problems.
N-type diamond is a difficult problem and confuses a lot of people.
Here are the design requirements:
a) Must be a substitutional dopant.
b) Must be shallow.
The physics behind boron and nitrogen doping of diamond is that they
have NEGATIVE energies of incorporation into the diamond lattice. In
other words it is energetically favorable to replace a carbon atom
with a nitrogen or boron atom. The host lattice will not be strained.
In the past, various clowns have tried other materials and reported
their results in Applied Physics Letters Science etc. The problem is
that because these other atoms are in some sense larger than carbon
when inserted in the diamond lattice they have positive energies of
incorporation and thus either deform the host sites and/or are not
substitutional. When experimenters measure n-type behavior in diamond,
what they are seeing is n-type behavior of the defects created.
Usually, no mobility measurements are reported. Low mobilities usually
confirm this. One could introduce a dopant that engineers a high
mobility n-type defect but that is another story and almost an
oxymoron.
Finally in regards to magnesium and titanium, any potential dopant
needs some surface mobility during growth. Since Mg and Ti form
carbides, (Ti an especially strong one) I have a feeling above a
certain doping level that they will form inclusions similar to V in
SiC. If Mg and Ti don't fit in the diamond lattice and have zero
surface mobility during epitaxy all you will create IMHO is carbide
inclusions in the diamond
- Next message: Jack: "Building a nanoblock"
- Previous message: Joann Evans: "Re: Leading nanotech experts put 'grey goo' in perspective"
- Next in thread: Uncle Al: "Re: Scaling beyond 130nm dead or alive? - n type diamond"
- Reply: Uncle Al: "Re: Scaling beyond 130nm dead or alive? - n type diamond"
- Messages sorted by: [ date ] [ thread ]
Relevant Pages
|
