Re: Dislocation creates 'whirlpool' that pulls surface atomsintocrystal

From: Danny at Chrastina dot net (Danny_at_chrastina.notreally)
Date: 06/14/04 

Date: 14 Jun 2004 16:13:23 GMT

On Mon, 14 Jun 2004, jbuch wrote:

> >>neutron_p@lycos.com (Neutron) wrote:
> >>
> >>>http://www.physorg.com/news160.html
>
> It is actually nearly impossible to tell what they found which is "new"
> from the Press Release.

        From the Nature letter itself: "We observe, in real time, the
thermally driven nucleation and shape-preserving growth of spiral steps
rotating at constant temperature-dependent angular velocities around cores
of dislocations terminating on the (111) surface of TiN in the absense of
applied external stress or net mass change. We attribute this phenomenon
to point-defect migration from the bulk to the surface along dislocation
lines."

        Dislocation-driven surface roughening is also relevant for
semiconductor strain-relaxed buffers. See for example Hoagland et. al.
http://link.aip.org/link/?apl/84/5136 or Kummer et. al.
http://link.aip.org/link/?prl/84/107. Interactions between point defects
and dislocations are especially relevant for some particular styles
of thin strain-relaxed buffer, for which this is a recent summary:
http://dx.doi.org/10.1016/j.sse.2004.01.021 

-- 
        Dr Danny Chrastina
Office: +39 031 3327612  Everywhere else: +39 333 2825623
                                http://www.chrastina.net/
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